How the alignment of adsorbed ortho H pairs determines the onset of selective carbon nanotube etching-Reference-Cited by-同舟云学术

How the alignment of adsorbed ortho H pairs determines the onset of selective carbon nanotube etching

Published:2017 Issue:4 Volume:9 Page:1653-1661
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Khalilov U.,Bogaerts A.,Xu B.,Kato T.,Kaneko T.,Neyts E. C.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2017/NR/C6NR08005G

Reference62 articles.

1. Y. Chen , A. K.Ng, S.Bai, R.Si, L.Wei and Q.Wang, Separation of Metallic and Semiconducting Single-Wall Carbon Nanotubes, Pan Stanford Publishing Pte Ltd, 2012, ch. 4

2. A Comprehensive Review on Separation Methods and Techniques for Single-Walled Carbon Nanotubes

3. Selective Etching of Metallic Carbon Nanotubes by Gas-Phase Reaction

4. Preferential Syntheses of Semiconducting Vertically Aligned Single-Walled Carbon Nanotubes for Direct Use in FETs

5. Selective Growth of Well-Aligned Semiconducting Single-Walled Carbon Nanotubes

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