High-performance light-emitting diodes using hierarchical m-plane GaN nano-prism light extractors-Reference-Cited by-同舟云学术

High-performance light-emitting diodes using hierarchical m-plane GaN nano-prism light extractors

Published:2015 Issue:34 Volume:3 Page:8873-8880
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

M. Siva Pratap Reddy¹²³⁴⁵,Park Herie¹²³⁴⁵,Kim Se-Min¹²³⁴⁵,Jang Seon-Ho¹²³⁴⁵,Jang Ja-Soon¹²³⁴⁵

Affiliation:

1. Department of Electronic Engineering

2. LED-IT Fusion Technology and Research Center (LIFTRC)

3. Yeungnam University

4. Gyeongbuk 712-749

5. Republic of Korea

Abstract

We demonstrated high-performance GaN-based light-emitting diodes (LEDs) with hierarchical m-plane nano-prism light extractors on the n-GaN mesa sidewalls by using a tetramethylammonium hydroxide (TMAH)-based crystallographic etching technique.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC01598G

Reference34 articles.

1. High performance of Ga-doped ZnO transparent conductive layers using MOCVD for GaN LED applications

2. White Light-Emitting Diode From Sb-Doped p-ZnO Nanowire Arrays/n-GaN Film

3. Recent Progress in GaN-Based Light-Emitting Diodes

4. Prospects for LED lighting

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