Tuning electronic properties in LaNiO3 thin films by B-site Cu-substitution-Reference-Cited by-同舟云学术

Tuning electronic properties in LaNiO3 thin films by B-site Cu-substitution

Published:2020 Issue:36 Volume:8 Page:12662-12668
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Sønsteby Henrik H.¹²³⁴⁵^ORCID,Skaar Erik¹²³⁴⁵,Bratvold Jon E.¹²³⁴⁵,Freeland John W.⁶⁷⁸,Yanguas-Gil Angel⁶⁷⁸,Elam Jeffrey W.⁶⁷⁸^ORCID,Nilsen Ola¹²³⁴⁵^ORCID,Fjellvåg Helmer¹²³⁴⁵

Affiliation:

1. Department of Chemistry

2. Centre for Materials Science and Nanotechnology

3. University of Oslo

4. Blindern

5. Norway

6. Argonne National Laboratory

7. Lemont

8. USA

Abstract

Cu-Substitution in LaNiO₃ by atomic layer deposition provides films spanning six orders of magnitude in resistivity, with metal insulator transition temperatures from 0 K to room temperature.

Funder

Argonne National Laboratory

Norges Forskningsråd

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC03406A

Reference31 articles.

1. Towards Oxide Electronics: a Roadmap

2. Oxide interfaces: pathways to novel phenomena