Controlling sulphur precursor addition for large single crystal domains of WS2-Reference-Cited by-同舟云学术

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Controlling sulphur precursor addition for large single crystal domains of WS2

Published:2014-09-08 Issue:20 Volume:6 Page:12096-12103
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Rong Youmin,Fan Ye,Leen Koh Ai,Robertson Alex W.,He Kuang,Wang Shanshan,Tan Haijie,Sinclair Robert,Warner Jamie H.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2014/NR/C4NR04091K

Reference37 articles.

1. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

2. Two-dimensional atomic crystals

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

5. MoS2 and WS2 Analogues of Graphene

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