Spintronic memristors for neuromorphic circuits based on the angular variation of tunnel magnetoresistance
Author:
Affiliation:
1. Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, IRIG-SPINTEC, 38000 Grenoble, France
Abstract
Funder
H2020 European Research Council
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR00346A
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1. Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor
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