Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix-Reference-Cited by-同舟云学术

Two-bit memory and quantized storage phenomenon in conventional MOS structures with double-stacked Pt-NCs in an HfAlO matrix

Author:

Zhou Guangdong¹²³⁴⁵,Wu Bo⁶⁷⁸⁹,Liu Xiaoqin¹²³⁴,Li Ping⁶⁷⁸⁹,Zhang Shuangju¹²³⁴,Sun Bai¹²³⁴,Zhou Ankun¹⁰¹¹¹²⁹

Affiliation:

1. Institute for Clean Energy & Advanced Materials (ICEAM)

2. Southwest University

3. Chongqing 400715

4. China

5. Guizhou Institute of Technology

6. Institute of Theoretical Physics

7. Zunyi Normal College

8. Zunyi 563002

9. P. R. China

10. KunMing Institute of Botany

11. Chinese Academy Science

12. Kunming 650201

Abstract

Two-bit memory and quantized storage phenomenon based on double-stacked Pt-NCs in an HfAlO matrix.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

Reference49 articles.

1. L. Stefan, Intel press release, 2001

2. International technology roadmap for semiconductors, ITRS, 2013

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