From CuFeS2 to Ba6Cu2FeGe4S16: rational band gap engineering achieves large second-harmonic-generation together with high laser damage threshold-Reference-Cited by-同舟云学术

From CuFeS2 to Ba6Cu2FeGe4S16: rational band gap engineering achieves large second-harmonic-generation together with high laser damage threshold

Published:2019 Issue:96 Volume:55 Page:14510-14513
ISSN:1359-7345
Container-title:Chemical Communications
language:en
Short-container-title:Chem. Commun.

Author:

Cao Wangzhu¹²³⁴^ORCID,Mei Dajiang¹²³⁴,Yang Yi⁵⁶⁷⁴⁸,Wu Yuanwang⁹¹⁰¹¹¹²⁴,Zhang Lingyun¹²³⁴^ORCID,Wu Yuandong¹²³⁴,He Xiao¹³¹⁴¹⁵¹²⁴^ORCID,Lin Zheshuai⁵⁶⁷⁴⁸,Huang Fuqiang¹⁶¹⁷⁶¹⁸⁴^ORCID

Affiliation:

1. College of Chemistry and Chemical Engineering

2. Shanghai University of Engineering Science

3. Shanghai 201620

4. China

5. Technical Institute of Physics and Chemistry

6. Chinese Academy of Sciences

7. Beijing 100190

8. University of Chinese Academy of Sciences

9. State Key Laboratory of Bioreactor Engineering

10. Department of Bioengineering

11. East China University of Science and Technology

12. Shanghai

13. Shanghai Engineering Research Center of Molecular Therapeutics and New Drug Development

14. School of Chemistry and Molecular Engineering

15. East China Normal University

16. State Key Laboratory of High Performance Ceramics and Superfine Microstructure

17. Shanghai Institute of Ceramics

18. Shanghai 200050

Abstract

From CuFeS₂, the introduction of Ge leads to an increase in band gap. The ordered arrangement of NLO active units [GeS₄] results in a strong SHG response. Finally, Ba₆Cu₂FeGe₄S₁₆ exhibits good NLO performance (SHG, 1.5 × AgGaSe₂; LDT, 2 × AgGaSe₂).

Funder

National Natural Science Foundation of China

Shanghai University of Engineering and Science

Chinese Academy of Sciences

National Basic Research Program of China

Natural Science Foundation of Shanghai

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CC/C9CC07288H

Reference64 articles.

1. Soluble Direct-Band-Gap Semiconductors LiAsS2and NaAsS2: Large Electronic Structure Effects from Weak As⋅⋅⋅S Interactions and Strong Nonlinear Optical Response

2. Flexible Polar Nanowires of Cs5BiP4Se12 from Weak Interactions between Coordination Complexes: Strong Nonlinear Optical Second Harmonic Generation

3. Explorations of New Second-Order Nonlinear Optical Materials in the Potassium Vanadyl Iodate System

4. Materials science: China's crystal cache

5. Functionalization Based on the Substitutional Flexibility: Strong Middle IR Nonlinear Optical Selenides AXII4XIII5Se12

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