Efficient carrier transport for 368 nm ultraviolet LEDs with a p-AlInGaN/AlGaN short-period superlattice electron blocking layer
Author:
Affiliation:
1. Institute of Semiconductors
2. Guangdong Academy of Sciences
3. Guangzhou 510650
4. China
5. South China Normal University
6. Guangzhou 510631
Abstract
Efficient carrier transport for 368 nm ultraviolet LEDs with a p-AlInGaN/AlGaN short-period superlattice electron blocking layer.
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC02191E
Reference31 articles.
1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2. High-performance vertical GaN-based near-ultraviolet light-emitting diodes on Si substrates
3. Ultraviolet light-emitting diodes based on group three nitrides
4. Al2O3/AlN/Al-based backside diffuse reflector for high-brightness 370-nm AlGaN ultraviolet light-emitting diodes
5. Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes
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