Conduction band discontinuity and carrier multiplication at the MgxZn1−xO/MgyZn1−yO interface-Reference-Cited by-同舟云学术

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Conduction band discontinuity and carrier multiplication at the MgxZn1−xO/MgyZn1−yO interface

Published:2016 Issue:41 Volume:6 Page:34955-34958
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Xie Xiuhua¹²³⁴⁵,Li Binghui¹²³⁴⁵,Zhang Zhenzhong¹²³⁴⁵,Wang Shuangpeng⁶⁷⁸⁹¹⁰,Shen Dezhen¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Luminescence and Applications

2. Changchun Institute of Optics

3. Fine Mechanics and Physics

4. Chinese Academy of Sciences

5. Changchun 130033

6. The Institute of Applied Physics and Materials Engineering

7. University of Macau

8. Avenida da Universidade

9. Macau

10. China

Abstract

The multiplication of photogenerated electrons induced by larger conduction band discontinuity contributes to internal photocurrent increasing.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA02919A

Reference15 articles.

1. AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89%

2. Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection

3. Single Schottky-barrier photodiode with interdigitated-finger geometry: Application to diamond

4. 193nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors

5. Enhanced solar-blind responsivity of photodetectors based on cubic MgZnO films via gallium doping

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4. Avalanche Effect and High External Quantum Efficiency in MgZnO/Au/ZnO Sandwich Structure Photodetector;Advanced Optical Materials;2021-02-08

5. High Responsivity MgxZn1–xO Based Ultraviolet Photodetector Fabricated by Dual Ion Beam Sputtering;IEEE Sensors Journal;2018-04-01

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