A novel explanation for the increased conductivity in annealed Al-doped ZnO: an insight into migration of aluminum and displacement of zinc-Reference-Cited by-同舟云学术

A novel explanation for the increased conductivity in annealed Al-doped ZnO: an insight into migration of aluminum and displacement of zinc

Published:2017 Issue:40 Volume:19 Page:27866-27877
ISSN:1463-9076
Container-title:Phys. Chem. Chem. Phys.
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Momot A.¹²³⁴⁵^ORCID,Amini M. N.⁶⁷⁵,Reekmans G.¹²⁸⁴⁵,Lamoen D.⁶⁷⁵,Partoens B.⁶⁷⁵,Slocombe D. R.⁹¹⁰¹¹,Elen K.¹²³⁴⁵,Adriaensens P.¹²⁸⁴⁵^ORCID,Hardy A.¹²³⁴⁵^ORCID,Van Bael M. K.¹²³⁴⁵

Affiliation:

1. UHasselt – Hasselt University

2. Institute for Materials Research (IMO-IMOMEC)

3. Inorganic and Physical Chemistry

4. 3590 Diepenbeek

5. Belgium

6. CMT & EMAT, Department of Physics, University of Antwerp, Groenenborgerlaan 171

7. B-2020 Antwerp

8. Applied and Analytical Chemistry

9. School of Engineering, Cardiff University, Queen's Buildings, The Parade

10. Cardiff

11. UK

Abstract

A combined experimental and first-principles study is performed to study the origin of conductivity in ZnO:Al nanoparticles synthesized under controlled conditions via a reflux route using benzylamine as a solvent.

Funder

Fonds Wetenschappelijk Onderzoek

Federaal Wetenschapsbeleid

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CP/C7CP02936E

Reference77 articles.

1. Fundamentals of zinc oxide as a semiconductor

2. A comprehensive review of ZnO materials and devices