Realizing new 2D spintronic materials from the non-magnetic 1T-PdO<sub>2</sub> monolayer through vacancy defects and doping-Reference-Cited by-同舟云学术

Realizing new 2D spintronic materials from the non-magnetic 1T-PdO₂ monolayer through vacancy defects and doping

Published:2024 Issue:10 Volume:14 Page:7241-7250
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Hoat D. M.¹²^ORCID,Van On Vo³,Van Huan Phan⁴,Guerrero-Sanchez J.⁵

Affiliation:

1. Institute of Theoretical and Applied Research, Duy Tan University, Ha Noi 100000, Vietnam

2. Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam

3. Center for Forecasting Study, Institute of Southeast Vietnamese Studies, Thu Dau Mot University, Binh Duong Province, Vietnam

4. Faculty of Basic Science, Binh Duong University, Binh Duong Province, Vietnam

5. Universidad Nacional Autónoma de México, Centro de Nanociencias y Nanotecnología, Apartado Postal 14, Ensenada, Baja California, Código Postal 22800, Mexico

Abstract

Defect engineering and doping are proposed as efficient approaches to create new 2D multifunctional materials from a non-magnetic semiconductor PdO2 monolayer.

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/RA/D3RA08866A

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