Rewritable non-volatile stress information memory by bulk trap-induced giant piezoresistance effect in individual PbS micro/nanowires-Reference-Cited by-同舟云学术

Rewritable non-volatile stress information memory by bulk trap-induced giant piezoresistance effect in individual PbS micro/nanowires

Published:2017 Issue:1 Volume:5 Page:229-237
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Shi Haiping¹²³⁴,Zheng Jianping¹²³⁴,Cheng Baochang¹²³⁴⁵,Zhao Jie¹²³⁴,Su Xiaohui⁵²³⁴,Xiao Yanhe¹²³⁴,Lei Shuijin¹²³⁴

Affiliation:

1. School of Materials Science and Engineering

2. Nanchang University

3. Nanchang

4. China

5. Nanoscale Science and Technology Laboratory/Institute for Advanced Study

Abstract

Stress information can be written in PbS micro/nanowire-based two-terminal devices, and then erased by a relatively high bias voltage. The repeatable writing/erasing characteristics of nanostructure devices offer an avenue to develop reliable non-volatile piezoresistance memory.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C6TC02999J

Reference62 articles.

1. Reliable Control of Filament Formation in Resistive Memories by Self-Assembled Nanoinsulators Derived from a Block Copolymer

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3. Nanoporous Silicon Oxide Memory