Core properties and the role of screw dislocations in the bulk n-type conductivity in InN-Reference-Cited by-同舟云学术

Core properties and the role of screw dislocations in the bulk n-type conductivity in InN

Published:2019 Issue:28 Volume:21 Page:15767-15778
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Belabbas Imad¹²³⁴⁵^ORCID,Pizzagalli Laurent⁶⁷⁸⁹¹⁰,Kioseoglou Joseph¹¹¹²¹³¹⁴^ORCID,Chen Jun¹⁵¹⁶¹⁷¹⁸¹⁹

Affiliation:

1. Equipe de Cristallographie et de Simulation des Matériaux

2. Laboratoire de Physico-Chimie des Matériaux et Catalyse

3. Faculté des Sciences Exactes

4. Université de Bejaia 06000

5. Algeria

6. Department of Physics and Mechanics of Materials

7. Institut P’

8. CNRS-Université de Poitiers UPR 3346

9. SP2MI

10. F-86962 Futuroscope Chasseneuil Cedex

11. Department of Physics

12. Aristotle University of Thessaloniki

13. GR-54124 Thessaloniki

14. Greece

15. CIMAP-Alençon

16. UMR6252

17. CNRS-CEA-ENSICAEN

18. Université de Caen Normandie

19. France

Abstract

First principles calculations, based on density functional theory, have been carried out to investigate the role of screw dislocations in the bulk n-type conductivity which is usually observed in indium nitride.

Funder

Université de Béjaïa

Ministère de l'Enseignement Supérieur et de la Recherche Scientifique

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CP/C9CP02062D

Reference70 articles.

1. III–nitrides: Growth, characterization, and properties

2. When group-III nitrides go infrared: New properties and perspectives

3. Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

4. Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

5. Threading dislocations in epitaxial InN thin films grown on (0001) sapphire with a GaN buffer layer

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