Formation of a vertical SnSe/SnSe<sub>2</sub> p–n heterojunction by NH<sub>3</sub> plasma-induced phase transformation-Reference-Cited by-同舟云学术

Formation of a vertical SnSe/SnSe₂ p–n heterojunction by NH₃ plasma-induced phase transformation

Published:2023 Issue:2 Volume:5 Page:443-449
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Li Yi¹²^ORCID,Duan Juanmei¹²,Berencén Yonder¹^ORCID,Hübner René¹^ORCID,Tsai Hsu-Sheng¹,Kuo Chia-Nung³⁴,Lue Chin Shan³⁴,Helm Manfred¹²,Zhou Shengqiang¹^ORCID,Prucnal Slawomir¹^ORCID

Affiliation:

1. Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, D-01328 Dresden, Germany

2. Technische Universität Dresden, D-01062 Dresden, Germany

3. Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan

4. Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10601, Taiwan

Abstract

Layered van der Waals crystals exhibit unique properties making them attractive for applications in nanoelectronics, optoelectronics, and sensing.

Funder

Ministry of Science and Technology, Taiwan

Helmholtz-Zentrum Dresden-Rossendorf

Bundesministerium für Bildung und Forschung

China Scholarship Council

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NA/D2NA00434H

Reference32 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Spin and pseudospins in layered transition metal dichalcogenides

3. Thermoelectric Response of Bulk and Monolayer MoSe2 and WSe2

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