Characterization of interfacial barrier charging as a resistive switching mechanism in Ag/Sb2Te3/Ag heterojunctions-Reference-Cited by-同舟云学术

Characterization of interfacial barrier charging as a resistive switching mechanism in Ag/Sb2Te3/Ag heterojunctions

Published:2018 Issue:27 Volume:20 Page:18200-18206
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Cao Xinran¹²³⁴⁵,Meng Caimin⁶⁷⁸⁹⁵,Li Jing¹²³⁴⁵^ORCID,Wang Jun¹²³⁴⁵,Yuan Yafei¹²³⁴⁵,Su Jing¹²³⁴⁵,Liu Chunmin¹²³⁴⁵,Zhang Xintong¹²³⁴⁵,Zhang Hao¹²³⁴⁵^ORCID,Wang Jianlu⁶⁷⁸⁹⁵

Affiliation:

1. Shanghai Ultra-Precision Optical Manufacturing Engineering Center

2. Department of Optical Science and Engineering

3. Fudan University

4. Shanghai

5. China

6. National Laboratory of Infrared Physics

7. Shanghai Institute of Technology Physics

8. Chinese Academy of Sciences

9. Shanghai 200083

Abstract

The memristive nature of Ag/Sb₂Te₃/Ag heterostructural cells was systematically characterized and potentially extended to a novel multilevel memory concept.

Funder

Natural Science Foundation of Shanghai

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CP/C8CP00901E

Reference36 articles.

1. Nanoionics-based resistive switching memories

2. Stochastic phase-change neurons