Recent advances of substitutionally doped tin dichalcogenides-Reference-Cited by-同舟云学术

Recent advances of substitutionally doped tin dichalcogenides

Published:2022 Issue:20 Volume:10 Page:7771-7782
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhang Hao¹,Zhang Zhenxiao¹,Zhan Qing¹,Liu Dongdong¹,Zhao Puqin²,Cheng Yingchun¹^ORCID

Affiliation:

1. Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China

2. School of Physical and Mathematical Sciences, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China

Abstract

Substitutionally doped tin dichalcogenides have potential for electric, photoelectric and thermoelectric applications.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC01034H

Reference119 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. 2D Materials: The thick and the thin

3. State‐of‐the‐Art and Future Prospects for Atomically Thin Membranes from 2D Materials

4. Atomically ThinMoS2: A New Direct-Gap Semiconductor

5. Emerging Photoluminescence in Monolayer MoS2

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