The influence of twist angle on the electronic and phononic band of 2D twisted bilayer SiC-Reference-Cited by-同舟云学术

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The influence of twist angle on the electronic and phononic band of 2D twisted bilayer SiC

Published:2023 Issue:46 Volume:13 Page:32641-32647
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Nguyen Hoa Van¹²,Nguyen Phi Minh¹²,Lam Vi Toan¹²^ORCID,Osamu Sugino³,Tran Hanh Thi Thu¹²^ORCID

Affiliation:

1. Laboratory of Computational Physics, Faculty of Applied Science, Ho Chi Minh City University of Technology (HCMUT), 268 Ly Thuong Kiet Street, District 10, Ho Chi Minh City, Vietnam

2. Vietnam National University Ho Chi Minh City, Linh Trung Ward, Thu Duc District, Ho Chi Minh City, Vietnam

3. The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan

Abstract

The height of atoms in the upper and lower layers of 5.1° (a and b), 13.2° (c and d) and 21.8° (e and f) twisted models. The interlayer distances of peaks tend to decrease as the twist angle increases.

Funder

Viet Nam National University Ho Chi Minh City

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/RA/D3RA04525K

Reference45 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The rise of graphene

3. Are fullerene tubules metallic?

4. Exact continuum model for low-energy electronic states of twisted bilayer graphene

5. Phonons in twisted bilayer graphene

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