Promising ultra-short channel transistors based on OM<sub>2</sub>S (M = Ga, In) monolayers for high performance and low power consumption-Reference-Cited by-同舟云学术

Promising ultra-short channel transistors based on OM₂S (M = Ga, In) monolayers for high performance and low power consumption

Published:2023 Issue:1 Volume:15 Page:356-364
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Xueping¹²^ORCID,Yuan Peize¹,Li Lin²,Liu Ting²,Shen Chenhai²,Jiang Yurong²^ORCID,Song Xiaohui²,Li Jingbo³,Xia Congxin²^ORCID

Affiliation:

1. College of Electronic and Electrical Engineering, Henan Normal University, Xinxiang, Henan 453007, China

2. Department of physics, Henan Normal University, Xinxiang 453007, China

3. Institute of Semiconductors, South China Normal University, Guangzhou 510631, China

Abstract

A device with a gate length less than 3 nm has a low subthreshold swing, fast switching speeds, and low switching energies, and the related parameters can simultaneously satisfy the ITRS in 2028.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR04840J

Reference58 articles.

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