Enhancement of heat dissipation in β-Ga<sub>2</sub>O<sub>3</sub> Schottky diodes through Cu-filled thermal vias: experimental and simulation investigations-Reference-Cited by-同舟云学术

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Enhancement of heat dissipation in β-Ga₂O₃ Schottky diodes through Cu-filled thermal vias: experimental and simulation investigations

Published:2024 Issue:29 Volume:12 Page:11094-11102
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

You Younghyun¹²^ORCID,Eom Hui Won³^ORCID,Park Jehwan¹^ORCID,Kim Myung Jun³^ORCID,Kim Jihyun¹^ORCID

Affiliation:

1. Department of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea

2. Advanced Package Process Development Team, Samsung Electronics, Suwon 16677, Republic of Korea

3. School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea

Abstract

Cu-filled thermal through-vias were formed in β-Ga2O3 Schottky diodes using ultraviolet laser drilling and Cu electroplating, where the temperature increase was suppressed by approximately 21% at the power density of 5.7 W mm−3.

Funder

Ministry of Trade, Industry and Energy

Defense Acquisition Program Administration

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC01811G

Reference25 articles.

1. Extreme high efficiency enabled by silicon carbide (SiC) power devices

2. Commercial GaN-Based Power Electronic Systems: A Review

3. A review of GaN RF devices and power amplifiers for 5G communication applications

4. Experimental electronic structure of In2O3and Ga2O3

5. A review of Ga2O3materials, processing, and devices

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