Anisotropic photoresponse of layered 2D SnS-based near infrared photodetectors-Reference-Cited by-同舟云学术

Anisotropic photoresponse of layered 2D SnS-based near infrared photodetectors

Published:2017 Issue:43 Volume:5 Page:11288-11293
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhang Zidong¹²³⁴⁵,Yang Juehan⁵⁶⁷⁸⁴,Zhang Kai⁵⁶⁷⁸⁴,Chen Shuai⁵⁶⁷⁸⁴,Mei Fuhong¹²³⁴,Shen Guozhen⁵⁶⁷⁸⁴^ORCID

Affiliation:

1. Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education and Research Center of Advanced Materials Science and Technology

2. Taiyuan University of Technology

3. Taiyuan 030024

4. China

5. State Key Laboratory for Superlattices and Microstructures

6. Institute of Semiconductors

7. Chinese Academy of Sciences

8. Beijing 100083

Abstract

In this work, the anisotropic photoresponse and the effects of defects on the anisotropic response based on layered SnS near infrared photodetectors were investigated.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/TC/C7TC02865B

Reference41 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Ultrafast graphene photodetector

3. High-Performance Monolayer WS2Field-Effect Transistors on High-κ Dielectrics