Native defects and substitutional impurities in two-dimensional monolayer InSe
Author:
Affiliation:
1. State Key Laboratory on Integrated Optoelectronics
2. College of Electronic Science and Engineering
3. Jilin University
4. Changchun 130012
5. China
Abstract
The electronic properties of native and substitutional defects in monolayer InSe, including formation energies and ionization energies are explored systematically. Also, the possible doping strategy for conductivity is proposed.
Funder
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2017/NR/C7NR03389C
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