MoO2 as a thermally stable oxide electrode for dynamic random-access memory capacitors-Reference-Cited by-同舟云学术

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MoO2 as a thermally stable oxide electrode for dynamic random-access memory capacitors

Published:2018 Issue:48 Volume:6 Page:13250-13256
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lee Woongkyu¹²³⁴^ORCID,Cho Cheol Jin⁵⁶⁷⁸⁹,Lee Woo Chul⁵⁶⁷⁸⁹,Hwang Cheol Seong⁹¹⁰⁷⁸^ORCID,Chang Robert P. H.¹²³⁴,Kim Seong Keun⁵⁶⁷⁸^ORCID

Affiliation:

1. Department of Materials Science and Engineering

2. Northwestern University

3. Evanston

4. USA

5. Center for Electronic Materials

6. Korea Institute of Science and Technology

7. Seoul

8. South Korea

9. Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center

10. Seoul National University

Abstract

MoO₂ is a promising oxide electrode with excellent thermal stability for next-generation DRAM capacitors.

Funder

National Research Foundation of Korea

Korea Institute of Science and Technology

National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC04167A

Reference24 articles.

1. Future of dynamic random-access memory as main memory

2. High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition

3. Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

4. Al-Doped TiO2 Films with Ultralow Leakage Currents for Next Generation DRAM Capacitors

5. Titanium dioxide thin films for next-generation memory devices

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1. In-situ crystallization of rutile-phased TiO2 via the template effect using MoO2 electrode for the metal-insulator-metal capacitor applications;Journal of Alloys and Compounds;2024-10

2. Atomic Layer Growth of Rutile TiO₂ Films with Ultrahigh Dielectric Constants via Crystal Orientation Engineering;ACS Applied Materials & Interfaces;2024-06-19

3. Growth of Atomic layer-deposited Monoclinic Molybdenum Dioxide Films Stabilized by Tin Oxide Doping for DRAM Capacitor Electrode Applications;ACS Applied Materials & Interfaces;2024-04-25

4. Self-isolating electrode deposition process using the area-selective MoO2 and MoO3 atomic layer deposition technique;Applied Materials Today;2024-04

5. High-Temperature Atomic Layer Deposition of Rutile TiO₂ Films on RuO₂ Substrates: Interfacial Reactions and Dielectric Performance;Chemistry of Materials;2024-03-28

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