Study of ion beam induced chemical effects in silicon with a downsized high resolution X-ray spectrometer for use with focused ion beams-Reference-Cited by-同舟云学术

Study of ion beam induced chemical effects in silicon with a downsized high resolution X-ray spectrometer for use with focused ion beams

Published:2016 Issue:11 Volume:31 Page:2293-2304
ISSN:0267-9477
Container-title:Journal of Analytical Atomic Spectrometry
language:en
Short-container-title:J. Anal. At. Spectrom.

Author:

Mihalić I. Božičević¹²³,Fazinić S.¹²³,Tadić T.¹²³,Cosic D.¹²³,Jakšić M.¹²³

Affiliation:

1. Ruđer Bošković Institut

2. HR-10000 Zagreb

3. Croatia

Abstract

A downsized wavelength dispersive X-ray spectrometer, employing a flat crystal and a CCD detector for use with focused ion beams has been constructed and employed to study ion beam induced chemical effects in Si K X-ray spectra from silicon and its selected compounds.

Publisher

Royal Society of Chemistry (RSC)

Subject

Spectroscopy,Analytical Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/JA/C6JA00276E

Reference63 articles.

1. Applications of wavelenght-dispersive spectrometry in particle-induced X-ray emission analysis

2. High energy resolution PIXE analysis using focused MeV heavy ion beams

3. Diagram and non-diagram lines in K spectra of nagnesium and oxygen from metallic and anodized magnesium

4. K X-Ray emission spectra from silicon and silicon compounds

5. X-ray analysis and mapping by wavelength dispersive X-ray spectroscopy in an electron microscope

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