Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching
Author:
Affiliation:
1. Institute of High Pressure Physics
2. Polish Academy of Sciences
3. 01-142 Warsaw
4. Poland
Abstract
Step-bunching during epitaxy induces inhomogeneous incorporation of a Si dopant into GaN at the nanometer scale as revealed by electrochemical etching.
Funder
Fundacja na rzecz Nauki Polskiej
Narodowe Centrum Badań i Rozwoju
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2020/NR/C9NR10968D
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