High performance DUV-visible 4H-SiC-based multilayered SnS2 dual-mode photodetectors-Reference-Cited by-同舟云学术

High performance DUV-visible 4H-SiC-based multilayered SnS2 dual-mode photodetectors

Published:2021 Issue:43 Volume:9 Page:15662-15670
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yue Qian¹,Gao Wei¹^ORCID,Wen Peiting¹,Chen Quan¹,Yang Mengmeng²^ORCID,Zheng Zhaoqiang²^ORCID,Luo Dongxiang¹,Huo Nengjie¹^ORCID,Zhang Feng³^ORCID,Li Jingbo¹⁴

Affiliation:

1. Institute of Semiconductors, South China Normal University, Guangzhou 510631, P. R. China

2. College of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China

3. Department of Physics, Xiamen University, Xiamen 361005, P. R. China

4. Guangdong Key Lab of Chip and Integration Technology, Guangzhou 510631, P. R. China

Abstract

Enhanced photocurrent density (0.1 μA μm−2), higher responsivity (>104 A W−1) and faster response time under 325 nm laser can be achieved by our fabricated SnS2/SiC photodetector towards a SiO2 sample.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TC/D1TC03884B

Reference53 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Recent Progress and Future Prospects of 2D-Based Photodetectors