Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition-Reference-Cited by-同舟云学术

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition

Published:2017 Issue:5 Volume:19 Page:3486-3497
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Huang Fei¹²³⁴⁵,Chen Xing⁶⁷⁸⁹⁴,Liang Xiao¹²³⁴⁵,Qin Jun¹²³⁴⁵,Zhang Yan¹²³⁴⁵,Huang Taixing¹²³⁴⁵,Wang Zhuo⁵²³⁴,Peng Bo¹²³⁴⁵,Zhou Peiheng¹²³⁴⁵,Lu Haipeng¹²³⁴⁵,Zhang Li¹²³⁴⁵,Deng Longjiang¹²³⁴⁵,Liu Ming¹⁰¹¹¹²⁴,Liu Qi¹⁰¹¹¹²⁴,Tian He⁶⁷⁸⁹⁴,Bi Lei¹²³⁴⁵

Affiliation:

1. National Engineering Research Center of Electromagnetic Radiation Control Materials

2. University of Electronic Science and Technology of China

3. Chengdu 610054

4. China

5. State Key Laboratory of Electronic Thin Films and Integrated Devices

6. Center of Electron Microscopy and State Key Laboratory of Silicon Materials

7. School of Materials Science and Engineering

8. Zhejiang University

9. Hangzhou 310027

10. Key Laboratory of Microelectronics Device & Integrated Technology

11. Lab of Nanofabrication and Novel Device Integration

12. IMECAS

Abstract

We report a systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CP/C6CP07501K

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