Heterovalent substitution in anionic and cationic positions of PbS thin-films grown by SILAR method vis-à-vis Fermi energy measured through scanning tunneling spectroscopy-Reference-Cited by-同舟云学术

Heterovalent substitution in anionic and cationic positions of PbS thin-films grown by SILAR method vis-à-vis Fermi energy measured through scanning tunneling spectroscopy

Published:2016 Issue:3 Volume:4 Page:551-558
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Bhunia Hrishikesh¹²³⁴,Kundu Biswajit¹²³⁴,Chatterjee Soumyo¹²³⁴,Pal Amlan J.¹²³⁴

Affiliation:

1. Department of Solid State Physics

2. Indian Association for the Cultivation of Science

3. Kolkata 700032

4. India

Abstract

Heterovalent element substitution at both ionic sites of PbS achieved during film formation. The dopants introduced free carriers in the semiconductor affecting the Fermi energy, which has been located by STS studies.

Funder

Nano Mission Council, Department of Science and Technology

Council of Scientific and Industrial Research

Department of Science and Technology, Ministry of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C5TC03959B

Reference27 articles.

1. Metal Chalcogenides: A Rich Source of Nonlinear Optical Materials