Type-II WS2/AsP van der Waals heterojunctions with high rectification ratio and high detectivity

Author:

Jia Runmeng1,Guo Tingting1,Wang Yifei1ORCID,Lin Yuhai1,Zhu Cheng1,Farhan Ahmad1,Xu Jing1,Ruan Banqin1,Zhang Aidi2,Chen Xiang1ORCID,Li Zhi1,Song Xiufeng1ORCID,Zeng Haibo1ORCID

Affiliation:

1. MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China

2. Engineering Research Center of Functional Polymer Membrane Materials of Jiangsu Province, Nanjing Bready Advanced Materials Technology Co., Ltd, No. 8 Baoding Road, Nanjing 211103, People's Republic of China

Abstract

The WS2/AsP vdWHs device with a type-II band structure suppresses dark currents and improves photoelectric characteristics. It boasts a detectivity of 1.72 × 1013 jones and a responsivity of 14.6 A W−1, showing great potential in future applications.

Funder

Natural Science Foundation of Jiangsu Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

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