Plasma-enhanced atomic-layer deposition of active layers of nanolaminated (InOx)n(GaZnOy)m for thin-film transistors
Author:
Affiliation:
1. Division of Materials Science and Engineering, Hanyang University, 222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Republic of Korea
2. R&D Center, Samsung Display, 1, Samsung-ro, Giheung-gu, Yongin 17113, Republic of Korea
Abstract
Funder
Ministry of Trade, Industry and Energy
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2022/TC/D1TC06050C
Reference36 articles.
1. Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors
2. Atomic Layer Deposition of an Indium Gallium Oxide Thin Film for Thin-Film Transistor Applications
3. Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition
4. Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
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