The role of native point defects and donor impurities in the electrical properties of ZnSb<sub>2</sub>O<sub>4</sub>: a hybrid density-functional study-Reference-Cited by-同舟云学术

The role of native point defects and donor impurities in the electrical properties of ZnSb₂O₄: a hybrid density-functional study

Published:2023 Issue:28 Volume:25 Page:19116-19125
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Charoenphon Supparat¹,Tubtimtae Auttasit²,Watanabe Isao³,Jungthawan Sirichok⁴,T-Thienprasert Jiraroj¹^ORCID,Boonchun Adisak¹^ORCID,Reunchan Pakpoom¹^ORCID

Affiliation:

1. Department of Physics, Faculty of Science, Kasetsart University, Bangkok 10900, Thailand

2. Division of Physics, Department of Physical and Material Sciences, Faculty of Liberal Arts and Science, Kasetsart University, Kamphaeng Saen Campus, Nakhon Pathom 73140, Thailand

3. Advanced Meson Science Laboratory, Nishina Center for Accelerator-Based Science, RIKEN, 2-1 Hirosawa, Wako 351-0198, Japan

4. School of Physics, Institute of Science, Suranaree University of Technology, Nakhon Ratchasima, 30000, Thailand

Abstract

Gallium is the most viable donor dopant. However, the pinned Fermi level remains far from the conduction band edge, resulting in a semi-insulating material. It is not easy to dope n-type ZnSb2O4.

Funder

Kasetsart University

Thailand Research Fund

Suranaree University of Technology

Thailand Science Research and Innovation

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CP/D3CP01470C

Reference59 articles.