Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: band structure and energy level alignment at layer/substrate interfaces-Reference-Cited by-同舟云学术

Electronic properties of atomically thin MoS2 layers grown by physical vapour deposition: band structure and energy level alignment at layer/substrate interfaces

Published:2018 Issue:14 Volume:8 Page:7744-7752
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Bussolotti Fabio¹²³⁴^ORCID,Chai Jainwei¹²³⁴,Yang Ming¹²³⁴^ORCID,Kawai Hiroyo¹²³⁴,Zhang Zheng¹²³⁴^ORCID,Wang Shijie¹²³⁴,Wong Swee Liang¹²³⁴,Manzano Carlos¹²³⁴,Huang Yuli¹²³⁴,Chi Dongzhi¹²³⁴,Goh Kuan Eng Johnson¹²³⁴⁵

Affiliation:

1. Institute of Materials Research and Engineering

2. A*STAR (Agency for Science, Technology and Research)

3. Singapore 138634

4. Singapore

5. Department of Physics

Abstract

The band structure of defective, rotationally disordered 2D TMDC layers is reported.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry