Atomic layer deposition of Y2O3 films using heteroleptic liquid (iPrCp)2Y(iPr-amd) precursor-Reference-Cited by-同舟云学术

Atomic layer deposition of Y2O3 films using heteroleptic liquid (iPrCp)2Y(iPr-amd) precursor

Published:2014 Issue:43 Volume:2 Page:9240-9247
ISSN:2050-7526
Container-title:J. Mater. Chem. C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Park In-Sung¹²³⁴²,Chan Jung Yong¹²³,Seong Sejong¹²³,Ahn Jinho¹²³,Kang Jiehun⁵⁶⁷,Noh Wontae⁸⁹,Lansalot-Matras Clement⁸⁹

Affiliation:

1. Division of Materials Science and Engineering

2. Hanyang University

3. Seoul 133-791, Korea

4. Institute of Nano Science and Technology

5. Department of Nano and Electronic Physics

6. Kookmin University

7. Seoul 136-702, Korea

8. Air Liquide Laboratories Korea

9. Seoul 120-749, Korea

Abstract

The Y₂O₃ films grown with a new and heteroleptic liquid Y precursor, (iPrCp)₂Y(iPr-amd), have been investigated with chemical properties of precursor, atomic layer deposition process, and material characterization of the deposited film and its non-volatile resistive switching behaviour.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/TC/C4TC01405G

Reference40 articles.

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2. Growth and Performance of Yttrium Oxide as an Ideal High-κ Gate Dielectric for Carbon-Based Electronics

3. Resistive Switching Behavior in the Ru∕Y[sub 2]O[sub 3]∕TaN Nonvolatile Memory Device

4. Al-SiO2-Y2O3-SiO2-poly-Si Thin-Film Transistor Nonvolatile Memory Incorporating a Y2O3 Charge Trapping Layer

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