A facile strategy for the growth of high-quality tungsten disulfide crystals mediated by oxygen-deficient oxide precursors-Reference-Cited by-同舟云学术

A facile strategy for the growth of high-quality tungsten disulfide crystals mediated by oxygen-deficient oxide precursors

Published:2022 Issue:26 Volume:14 Page:9485-9497
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Miakota Denys I.¹^ORCID,Unocic Raymond R.²^ORCID,Bertoldo Fabian³,Ghimire Ganesh¹,Engberg Sara¹^ORCID,Geohegan David²,Thygesen Kristian S.³^ORCID,Canulescu Stela¹^ORCID

Affiliation:

1. Department of Photonics Engineering, Technical University of Denmark, DK-4000 Roskilde, Denmark

2. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

3. CAMD and Center for Nanostructured Graphene (CNG), Department of Physics, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark

Abstract

Chemical vapor deposition (CVD) has been established as a versatile route for the large-scale synthesis of transition metal dichalcogenides, such as tungsten disulfide (WS2).

Funder

Danmarks Grundforskningsfond

H2020 European Research Council

Det Frie Forskningsråd

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR01863B

Reference62 articles.

1. Stable 1T Tungsten Disulfide Monolayer and Its Junctions: Growth and Atomic Structures