A facile process to achieve hysteresis-free and fully stabilized graphene field-effect transistors
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2015/NR/C4NR06397J
Reference41 articles.
1. Synthesis, Transfer, and Devices of Single- and Few-Layer Graphene by Chemical Vapor Deposition
2. Chemical Vapor Deposition-Derived Graphene with Electrical Performance of Exfoliated Graphene
3. Patterned Graphene as Source/Drain Electrodes for Bottom-Contact Organic Field-Effect Transistors
4. Gate-controlled nonvolatile graphene-ferroelectric memory
5. Effect of Top Dielectric Medium on Gate Capacitance of Graphene Field Effect Transistors: Implications in Mobility Measurements and Sensor Applications
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