Ultra-high drivability, high-mobility, low-voltage and high-integration intrinsically stretchable transistors-Reference-Cited by-同舟云学术

Ultra-high drivability, high-mobility, low-voltage and high-integration intrinsically stretchable transistors

Published:2020 Issue:46 Volume:12 Page:23546-23555
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Huang Weihong¹²³⁴^ORCID,Jiao Haoxuan¹²³⁴^ORCID,Huang Qiuyue¹²³⁴^ORCID,Zhang Jiaona¹²³⁴^ORCID,Zhang Min¹²³⁴^ORCID

Affiliation:

1. School of Electronic and Computer Engineering

2. Peking University

3. Shenzhen 518055

4. China

Abstract

Realizing intrinsically stretchable transistors with high current drivability, high mobility, small feature size, low power and the potential for mass production is essential for advancing stretchable electronics a critical step forward.

Funder

Shenzhen Science and Technology Innovation Program

National Natural Science Foundation of China

Science and Technology Planning Project of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NR/D0NR05486K

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