Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions-Reference-Cited by-同舟云学术

Synthesis of a novel strontium-based wide-bandgap semiconductor via X-ray photochemistry under extreme conditions

Published:2018 Issue:46 Volume:6 Page:12473-12478
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Evlyukhin Egor¹²³⁴^ORCID,Kim Eunja¹²³⁴,Cifligu Petrika¹²³⁴,Goldberger David¹²³⁴,Schyck Sarah¹²³⁴,Harris Blake¹²³⁴,Torres Sindi¹²³⁴,Rossman George R.⁵⁶⁷⁸⁴,Pravica Michael¹²³⁴^ORCID

Affiliation:

1. Department of Physics and Astronomy

2. University of Nevada Las Vegas (UNLV)

3. Las Vegas

4. USA

5. Division of Geological and Planetary Sciences

6. California Institute of Technology

7. Pasadena

8. California

Abstract

The synthesis of a Sr-based wide bandgap semiconductor via X-ray irradiation of strontium oxalate at high pressure has been demonstrated.

Funder

U.S. Department of Energy

National Nuclear Security Administration

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C8TC04496A

Reference50 articles.

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3. Interplay between Order and Disorder in the High Performance of Amorphous Transparent Conducting Oxides

4. The mechanism of threshold switching in amorphous alloys

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