Electronic and optical properties of thiogermanate AgGaGeS4: theory and experiment

Author:

Vu Tuan V.12ORCID,Dat Vo D.12,Lavrentyev A. A.3,Gabrelian B. V.4,Hieu Nguyen N.56ORCID,Myronchuk G. L.78,Khyzhun O. Y.78ORCID

Affiliation:

1. Laboratory for Computational Physics, Institute for Computational Science and Artificial Intelligence, Van Lang University, Ho Chi Minh City, Vietnam

2. Faculty of Mechanical – Electrical and Computer Engineering, Van Lang University, Ho Chi Minh City, Vietnam

3. Department of Electrical Engineering and Electronics, Don State Technical University, 1 Gagarin Square, 344010 Rostov-on-Don, Russian Federation

4. Department of Computational Technique and Automated System Software, Don State Technical University, 1 Gagarin Square, 344010 Rostov-on-Don, Russian Federation

5. Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam

6. Faculty of Natural Sciences, Duy Tan University, Da Nang 550000, Vietnam

7. Department of Experimental Physics and Information-Measuring Technology, Lesya Ukrainka Volyn National University, 13 Voli Avenue, 43025 Lutsk, Ukraine

8. Frantsevych Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3 Krzhyzhanivsky Street, 03142 Kyiv, Ukraine

Abstract

The electronic and optical properties of a AgGaGeS4 crystal were studied by first-principles calculations, and experimental X-ray photoelectron and emission spectra were measured to verify the theoretical data.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Reference54 articles.

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