Room-temperature spin transport in InAs nanowire lateral spin valve-Reference-Cited by-同舟云学术

Room-temperature spin transport in InAs nanowire lateral spin valve

Published:2016 Issue:79 Volume:6 Page:75736-75740
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Wang Zhicheng¹²³⁴⁵,Pan Dong⁶⁷⁸⁴⁵,Wang Le⁹¹⁰⁴⁵,Wang Tingwen¹²³⁴⁵,Zhao Bing¹²³⁴⁵,Wu Yong¹²³⁴⁵,Yang Ming¹²³⁴⁵,Xu Xiaoguang¹²³⁴⁵,Miao Jun¹²³⁴⁵,Zhao Jianhua⁶⁷⁸⁴⁵,Jiang Yong¹²³⁴⁵

Affiliation:

1. State Key Laboratory for Advanced Metals and Materials

2. School of Materials Science and Engineering

3. University of Science and Technology Beijing

4. Beijing

5. China

6. State Key Laboratory of Superlattices and Microstructures

7. Institute of Semiconductors

8. Chinese Academy of Sciences

9. Department of Physics

10. Renmin University of China

Abstract

We report room temperature spin transport in an InAs nanowire device. A large spin signal of 35 kΩ and long spin diffusion length of 1.9 μm are achieved. We believe that these results open a practical way to design InAs NW based spintronic devices.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA13516A

Reference44 articles.

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2. Control of Spin Precession in a Spin-Injected Field Effect Transistor

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