A refresh operation method for solving thermal stability issues and improving endurance of ovonic threshold switching selectors
Author:
Affiliation:
1. School of Integrated Circuits & School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
2. Hubei Yangtze Memory Laboratories, Wuhan, 430205, China
Abstract
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Natural Science Foundation of Hubei Province
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC00448A
Reference50 articles.
1. AlxTe1−x selector with high ovonic threshold switching performance for memory crossbar arrays
2. Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application
3. S.Hong , Presented in part at the 2010 International Electron Devices Meeting, 6–8 Dec. 2010
4. Zn1−xTex Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters
5. Phase-Change Memory—Towards a Storage-Class Memory
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1. Sb‐Se‐based electrical switching device with fast transition speed and minimized performance degradation due to stable mid‐gap states;Electron;2024-06-15
2. Chalcogenide Ovonic Threshold Switching Selector;Nano-Micro Letters;2024-01-11
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