Three-dimensional line edge roughness in pre- and post-dry etch line and space patterns of block copolymer lithography-Reference-Cited by-同舟云学术

Three-dimensional line edge roughness in pre- and post-dry etch line and space patterns of block copolymer lithography

Published:2020 Issue:2 Volume:22 Page:478-488
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Pinge Shubham¹²³⁴,Qiu Yufeng¹²³⁴,Monreal Victor⁵⁶⁴,Baskaran Durairaj⁵⁶⁴,Ravirajan Abhaiguru¹²³⁴,Joo Yong Lak¹²³⁴^ORCID

Affiliation:

1. Robert Frederick Smith School of Chemical and Biomolecular Engineering

2. Cornell University

3. Ithaca

4. USA

5. EMD Performance Materials Corp.

6. Somerville

Abstract

In this work, we employ large-scale coarse-grained molecular dynamics (CGMD) simulations to study the three-dimensional line edge roughness associated with line and space patterns of chemo-epitaxially directed symmetric block copolymers.

Funder

National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CP/C9CP05398K

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