An ultrahigh performance InGaN/GaN visible-light phototransducer based on polarization induced heterointerface barrier and minority carrier localization-Reference-Cited by-同舟云学术

An ultrahigh performance InGaN/GaN visible-light phototransducer based on polarization induced heterointerface barrier and minority carrier localization

Published:2023 Issue:16 Volume:11 Page:5281-5289
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lv Zesheng¹^ORCID,Zhang Supeng¹,Wang Gang¹²³,Jiang Hao¹²³

Affiliation:

1. School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, Guangdong, 510006, China

2. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, Guangdong, 510006, China

3. Guangdong Engineering Technology R & D Center of Compound Semiconductors and Devices, Sun Yat-sen University, Guangzhou, Guangdong, 510006, China

Abstract

Polarization induced negative charges at pseudo-crystalline InGaN/GaN heterointerfaces were utilized to increase the interface potential and to form a bidirectional potential barrier, leading to an ultrasensitive photoresponse.

Funder

Special Project for Research and Development in Key areas of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/TC/D3TC00631J

Reference42 articles.

1. Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs

2. Lateral-Polarity Structure of AlGaN Quantum Wells: A Promising Approach to Enhancing the Ultraviolet Luminescence

3. Spontaneous and piezoelectric polarization effects in wurtzite ZnO∕MgZnO quantum well lasers

4. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

5. Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes

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