Na–Ga–Si type-I clathrate single crystals grown via Na evaporation using Na–Ga and Na–Ga–Sn fluxes

Author:

Urushiyama Hironao1234,Morito Haruhiko5234ORCID,Yamane Hisanori1234ORCID,Terauchi Masami1234

Affiliation:

1. Institute of Multidisciplinary Research for Advanced Materials

2. Tohoku University

3. Sendai 980-8577

4. Japan

5. Institute for Materials Research

Abstract

Single crystals of a Na–Ga–Si clathrate, Na8Ga4.94Si41.06, of size 3.7 mm were grown via the evaporation of Na from a Na–Ga–Si–Sn melt with the molar ratio of Na : Ga : Si : Sn = 6 : 1 : 2 : 1 at 873 K for 3 h under an Ar atmosphere.

Funder

Japan Society for the Promotion of Science

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

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