Na–Ga–Si type-I clathrate single crystals grown via Na evaporation using Na–Ga and Na–Ga–Sn fluxes
Author:
Affiliation:
1. Institute of Multidisciplinary Research for Advanced Materials
2. Tohoku University
3. Sendai 980-8577
4. Japan
5. Institute for Materials Research
Abstract
Single crystals of a Na–Ga–Si clathrate, Na8Ga4.94Si41.06, of size 3.7 mm were grown via the evaporation of Na from a Na–Ga–Si–Sn melt with the molar ratio of Na : Ga : Si : Sn = 6 : 1 : 2 : 1 at 873 K for 3 h under an Ar atmosphere.
Funder
Japan Society for the Promotion of Science
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA07971D
Reference27 articles.
1. Clathrate Structure of Silicon Na 8 Si 46 and Na x Si 136 ( x < 11)
2. Wide-band-gap Si in open fourfold-coordinated clathrate structures
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5. Na–Si binary phase diagram and solution growth of silicon crystals
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