Effect of point defects on the band alignment and transport properties of 1T-MoS2/2H-MoS2/1T-MoS2 heterojunctions-Reference-Cited by-同舟云学术

Effect of point defects on the band alignment and transport properties of 1T-MoS₂/2H-MoS₂/1T-MoS₂ heterojunctions

Published:2024 Issue:17 Volume:26 Page:13230-13238
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Cong Yifei¹,Tao Bairui²,Lu Xinzhu¹,Liu Xiaojie¹,Wang Yin³^ORCID,Yin Haitao¹^ORCID

Affiliation:

1. Key Laboratory for Photonic and Electronic Bandgap Materials of Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin, 150025, China

2. College of Communications and Electronics Engineering, Qiqihar University, Qiqihar, 161006, China

3. Department of Physics and International Centre for Quantum and Molecular Structures, Shanghai University, Shanghai, 200444, China

Abstract

Defects in the central scattering region can generate local impurity states and introduce new transmission peaks, while defects at the interface do not generate impurity-state-related transmission peaks.

Funder

Natural Science Foundation of Heilongjiang Province

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/CP/D4CP00707G

Reference37 articles.

1. Synthesis of Two-Dimensional Materials by Selective Extraction

2. Non-layered 2D materials toward advanced photoelectric devices: progress and prospects

3. Two-Dimensional Materials for Sensing: Graphene and Beyond

4. Quantum dots derived from two-dimensional materials and their applications for catalysis and energy

5. Two-Dimensional-Material-Based Field-Effect Transistor Biosensor for Detecting COVID-19 Virus (SARS-CoV-2)