Structure and electronic bandgap tunability of m-plane GaN multilayers
Author:
Affiliation:
1. State Key Laboratory of Coal Combustion
2. School of Energy and Power Engineering
3. Huazhong University of Science and Technology
4. Wuhan
5. China
Abstract
Two-dimensional (2D) m-plane GaN is a new 2D phase of covalently bonded GaN. The dangling bonds of the surface layer play an essential role in determining the structure and electronic bandgap.
Funder
National Natural Science Foundation of China
Ministry of Science and Technology of the People's Republic of China
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2021/CP/D0CP06093C
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