Solution processable in situ passivated silicon nanowires-Reference-Cited by-同舟云学术

Solution processable in situ passivated silicon nanowires

Published:2021 Issue:26 Volume:13 Page:11439-11445
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Yan Jun¹,Ge Kunpeng¹,Li Han²,Yang Xueliang³,Chen Jingwei¹,Wan Lu¹,Guo Jianxin¹^ORCID,Li Feng³,Xu Ying¹,Song Dengyuan³,Flavel Benjamin S.²^ORCID,Chen Jianhui¹²^ORCID

Affiliation:

1. Hebei Key Lab of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China

2. Institute of Nanotechnology, Karlsruhe Institute of Technology, Karlsruhe 76021, Germany

3. State Key Laboratory of Photovoltaic Materials & Technology, Yingli Green Energy Holding Co., Ltd., Baoding 071051, China

Abstract

The 1D confinement of silicon in the form of a nanowire revives its newness with the emergence of new optical and electronic properties.

Funder

National Natural Science Foundation of China

Hebei Province Outstanding Youth Fund

Natural Science Foundation of Hebei Province

National Key Research and Development Program of China

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR02131A

Reference49 articles.

1. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

2. Silicon Nanocrystals: Size Matters

3. Coaxial silicon nanowires as solar cells and nanoelectronic power sources

4. Theoretical study of small silicon clusters: Equilibrium geometries and electronic structures of Sin (n=2–7,10)

5. Realization of a Silicon Nanowire Vertical Surround-Gate Field-Effect Transistor

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