Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions-Reference-Cited by-同舟云学术

Impact of interfacial effects on ferroelectric resistance switching of Au/BiFeO3/Nb:SrTiO3(100) Schottky junctions

Published:2017 Issue:37 Volume:7 Page:22715-22721
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

He Shumin¹²³⁴⁵,Liu Guolei¹²³⁴⁵^ORCID,Zhu Yinlian⁶⁷⁸⁹⁵,Ma Xiuliang⁶⁷⁸⁹⁵,Sun Jirong¹⁰¹¹¹²⁵^ORCID,Kang Shishou¹²³⁴⁵,Yan Shishen¹²³⁴⁵,Chen Yanxue¹²³⁴⁵^ORCID,Mei Liangmo¹²³⁴⁵,Jiao Jun¹³¹⁴¹⁵¹⁶

Affiliation:

1. School of Physics

2. State Key Laboratory of Crystal Materials

3. Shandong University

4. Jinan 250100

5. China

6. Shengyang National Laboratory for Materials Science

7. Institute of Metal Research

8. Chinese Academy of Sciences

9. Shenyang 110016

10. Beijing National Laboratory for Condensed Matter Physics and Institute of Physics

11. Chinese Academy of Science

12. Beijing 100190

13. Department of Mechanical and Materials Engineering

14. Portland State University

15. Portland

16. USA

Abstract

Direct evidence of purely interfacial effects on resistance switching is demonstrated in Au/BiFeO₃/Nd:SrTiO₃(001) (Au/BFO/NSTO) Schottky junctions by reducing the thickness of ferroelectric interlayer BFO.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C7RA02339A

Reference41 articles.

1. Emerging memories: resistive switching mechanisms and current status

2. Resistive switching in transition metal oxides

3. Nanoionics-based resistive switching memories