Room temperature dilute magnetic semiconductor response in (Gd, Co) co-doped ZnO for efficient spintronics applications

Author:

Khan Rajwali12ORCID,Shigidi Ihab3ORCID,Al Otaibi Sattam4,Althubeiti Khaled5ORCID,Abdullaev Sherzod Shukhratovich6,Rahman Nasir2ORCID,Mohammad sohail 2,Khan Alamzeb7,Iqbal Shahid8,Del Rosso Tommaso9,Zaman Quaid10ORCID,Khan Aurangzeb11

Affiliation:

1. Department of Physics, Zhejiang University, Hangzhou, China

2. Department of Physics, University of Lakki Marwat, 28420 KP, Pakistan

3. Chemical Engineering Department, King Khalid University, P.O. Box 395, Abha 61411, Saudi Arabia

4. Department of Electrical Engineering, College of Engineering, Taif University, P.O. Box 110, Taif 21944, Saudia Arabia

5. Department of Chemistry, College of Science, Taif University, P.O. Box 110, Taif 21944, Saudia Arabia

6. Andijan Machine-Building Institute, Andijan, Uzbekistan

7. Department of Pediatrics, Yale School of Medicine, Yale University, New Haven, CT, 06511, USA

8. Department of Physics, Albion College, Albion, Michigan, 49224, USA

9. Department of Physics, Pontifícia Universidade Católica do Rio de Janeiro, Rua Marques de São Vicente, 22451-900, Rio de Janeiro, Brazil

10. Department of Physics, University of Buner, Pakistan

11. Department of Physics, Abdul Wali Khan University, KP, Pakistan

Abstract

The structure parameters of the synthesize ZnO, Zn0.96Gd0.04O and Zn0.96−xGd0.04CoxO (Co = 0, 0.01, 0.03, 0.04) diluted magnetic semiconductor nanotubes.

Funder

King Khalid University

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

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