Extremely large magnetoresistance with coexistence of a nontrivial Berry phase in Nb0.5Ta0.5P: an experimental and theoretical study

Author:

Gangwar Vinod K.1,Singh Saurabh2,Ghosh Swayangsiddha1,Dixit Srishti1,Kumar Shiv3ORCID,Shahi Prashant4,Uwatoko Yoshiya5,Chatterjee Sandip1ORCID

Affiliation:

1. Department of Physics, Indian Institute of Technology (BHU), Varanasi 221005, India

2. Toyota Technological Institute, Energy Materials Laboratory, Hisakata 2-12-1, Tempaku, Nagoya 468-8511, Japan

3. Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima City 739-0046, Japan

4. Department of Physics, D.D.U. Gorakhpur University, Gorakhpur 273009, India

5. Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan

Abstract

We synthesized Nb0.5Ta0.5P, exhibiting XMR at low temperatures with charge carrier compensation up to 50 K. SdH oscillations reveal multiple Fermi pockets and non-zero Berry phase. SOC effects were analyzed via band structure calculations.

Funder

Science and Engineering Research Board

Publisher

Royal Society of Chemistry (RSC)

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