Formation of polarization needle-like domain and its unusual switching in compositionally graded ferroelectric thin films: an improved phase field model-Reference-Cited by-同舟云学术

Formation of polarization needle-like domain and its unusual switching in compositionally graded ferroelectric thin films: an improved phase field model

Published:2019 Issue:13 Volume:9 Page:7575-7586
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Van Lich Le¹²³⁴^ORCID,Dinh Van-Hai¹²³⁴

Affiliation:

1. School of Materials Science and Engineering

2. Hanoi University of Science and Technology

3. Hanoi

4. Vietnam

Abstract

New phase field model to reveal switching mechanism of needle domain in compositionally graded ferroelectric thin film.

Funder

National Foundation for Science and Technology Development

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C8RA10614B

Reference75 articles.

1. Ferroelectric Memories

2. Applications of Modern Ferroelectrics

3. Physics of the ferroelectric nonvolatile memory field effect transistor

4. Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures

5. Tunneling Across a Ferroelectric

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