Strain and defect-engineering on the basal plane of ultra-large MoS<sub>2</sub> monolayers attached onto stretchable gold electrodes-Reference-Cited by-同舟云学术

Strain and defect-engineering on the basal plane of ultra-large MoS₂ monolayers attached onto stretchable gold electrodes

Published:2024 Issue:28 Volume:12 Page:17338-17349
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Hasimoto Leonardo H.¹²^ORCID,de Araujo Ana B. S.¹³,de Lourenço Cláudia¹³,Merces Leandro⁴⁵^ORCID,Candioto Graziâni⁶^ORCID,Leite Edson R.¹^ORCID,Capaz Rodrigo B.¹⁶,Santhiago Murilo¹²^ORCID

Affiliation:

1. Brazilian Nanotechnology National Laboratory, Brazilian Center for Research in Energy and Materials, Campinas, São Paulo 13083-970, Brazil

2. Federal University of ABC, Santo André, São Paulo 09210-580, Brazil

3. Institute of Chemistry, University of Campinas, Campinas, São Paulo 13083-970, Brazil

4. Ilum School of Science, Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, SP, Brazil

5. Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126 Chemnitz, Germany

6. Instituto de Física, Universidade Federal do Rio de Janeiro, Rio de Janeiro, RJ 21941 972, Brazil

Abstract

Stretching the performance of ultra-large MoS2 monolayers for electrochemical hydrogen generation – flexible and stretchable gold electrodes were fabricated to tune the reactivity of MoS2 monolayers.

Funder

Instituto Serrapilheira

Fundação de Amparo à Pesquisa do Estado de São Paulo

Fundação Carlos Chagas Filho de Amparo à Pesquisa do Estado do Rio de Janeiro

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TA/D4TA02042A

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